www.irf.com 1 5/4/00 irf830as/l smps mosfet hexfet ? power mosfet l switch mode power supply (smps) l uninterruptable power supply l high speed power switching benefits applications l low gate charge qg results in simple drive requirement l improved gate, avalanche and dynamic dv/dt ruggedness l fully characterized capacitance and avalanche voltage and current l effective coss specified (see an 1001) v dss r ds(on) max i d 500v 1.40 w 5.0a typical smps topologies: l two transistor forward l half bridge and full bridge pd- 92006a notes ? through ? are on page 10 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v ? 5.0 i d @ t c = 100c continuous drain current, v gs @ 10v ? 3.2 a i dm pulsed drain current ?? 20 p d @t a = 25c power dissipation 3.1 w p d @t c = 25c power dissipation 74 linear derating factor 0.59 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt ?? 5.3 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings d 2 pak to-262
irf830as/l 2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 2.8 CCC CCC s v ds = 50v, i d = 3.0a ? q g total gate charge CCC CCC 24 i d = 5.0a q gs gate-to-source charge CCC CCC 6.3 nc v ds = 400v q gd gate-to-drain ("miller") charge CCC CCC 11 v gs = 10v, see fig. 6 and 13 ?? t d(on) turn-on delay time CCC 10 CCC v dd = 250v t r rise time CCC 21 CCC i d = 5.0a t d(off) turn-off delay time CCC 21 CCC r g = 14 w t f fall time CCC 15 CCC r d = 49 w ,see fig. 10 ?? c iss input capacitance CCC 620 CCC v gs = 0v c oss output capacitance CCC 93 CCC v ds = 25v c rss reverse transfer capacitance CCC 4.3 CCC pf ? = 1.0mhz, see fig. 5 c oss output capacitance CCC 886 CCC v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance CCC 27 CCC v gs = 0v, v ds = 400v, ? = 1.0mhz c oss eff. effective output capacitance CCC 39 CCC v gs = 0v, v ds = 0v to 400v ?? dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ?? CCC 230 mj i ar avalanche current ?? CCC 5.0 a e ar repetitive avalanche energy ? CCC 7.4 mj avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.5 v t j = 25c, i s = 5.0a, v gs = 0v ? t rr reverse recovery time CCC 430 650 ns t j = 25c, i f = 5.0a q rr reverse recoverycharge CCC 2.0 3.0 c di/dt = 100a/s ?? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) diode characteristics 5.0 20 a static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 500 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.60 CCC v/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance CCC CCC 1.4 w v gs = 10v, i d = 3.0a ? v gs(th) gate threshold voltage 2.0 CCC 4.5 v v ds = v gs , i d = 250a CCC CCC 25 a v ds = 500v, v gs = 0v CCC CCC 250 v ds = 400v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 100 v gs = 30v gate-to-source reverse leakage CCC CCC -100 na v gs = -30v i gss i dss drain-to-source leakage current parameter typ. max. units r q jc junction-to-case CCC 1.7 c/w r q ja junction-to-ambient ( pcb mounted, steady-state)* CCC 40 thermal resistance
irf830as/l www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 100 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 100 4.0 5.0 6.0 7.0 8.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 5.0a
irf830as/l 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 4 8 12 16 20 24 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 5.0a v = 100v ds v = 250v ds v = 400v ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 10 100 1000 10000 operation in this area limited by r ds(on) sin g le pulse t t = 150 c = 25 c j c v , drain-to-source volta g e (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 1000 10000 1 10 100 1000 c, capacitance (pf) ds v , drain-to-source volta g e ( v ) a v = 0v , f = 1mhz c = c + c , c sho rte d c = c c = c + c gs iss g s g d ds rss g d oss ds g d c iss c oss c rss
irf830as/l www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temperature ( c) i , drain current (a) c d
irf830as/l 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 100 200 300 400 500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 2.2a 3.2a 5.0a fig 12d. typical drain-to-source voltage vs. avalanche current 770 775 780 785 790 0.0 1.0 2.0 3.0 4.0 5.0 a dsav av i , avalanche current (a) v , avalanche voltage (v)
irf830as/l www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfet * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
irf830as/l 8 www.irf.com d 2 pak package outline d 2 pak part marking information 10.16 (.400) r e f. 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) r e f. - b - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - a - 2 1 3 15.49 (.610) 14.73 (.580) 3x 0.93 (.037) 0.69 (.027) 5.08 (.200) 3x 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) m ax. notes: 1 dimensions after solder dip. 2 dimensioning & tolerancing per ansi y14.5m, 1982. 3 controlling dimension : inch. 4 heatsink & lead dimensions do not include burrs. 0.55 (.022) 0.46 (.018) 0.25 (.010) m b a m minimum recommended footprint 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2x lead assignments 1 - gate 2 - d ra in 3 - source 2.54 (.100) 2x part number international rectifier logo date code (yyw w ) yy = year ww = week assembly lot code f530s 9b 1m 9246 a
irf830as/l www.irf.com 9 to-262 part marking information package outline to-262 outline
irf830as/l 10 www.irf.com ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? i sd 5.0a, di/dt 370a/s, v dd v (br)dss , t j 150c notes: ? starting t j = 25c, l = 18mh r g = 25 w , i as = 5.0a. (see figure 12) ? pulse width 300s; duty cycle 2%. ? c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss tape & reel information d 2 pak 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. ? uses irf830a data and test conditions * when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional centre: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 5/00
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